Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon

Authors

Sergey I. Kudryashov, Florida State UniversityFollow
Susan D. Allen, Florida State UniversityFollow

Document Type

Article

Publication/Presentation Date

11-1-2002

Abstract/Description

Direct absorption and melting of 0.2, 0.5 and 1.1 μm polystyrene particles on a Si substrate irradiated by 248 nm excimer laser radiation was found to contribute to their dry laser removal via a "hopping" mechanism at cleaning thresholds of 0.05, 0.1, and 0.16 J/cm ², respectively. Ablation of these particles, which starts near the beginning of substrate deceleration at fluences above 0.4-0.5 J/cm ², suppresses particle removal due to ablative recoil momentum. At fluences above a second cleaning threshold of 0.7 J/cm ² particles are completely evaporated without any visible surface damage of the Si substrate.

© 2002 American Institute of Physics.

Publication Title

Journal of Applied Physics

DOI

https://doi.org/10.1063/1.1503854

Publisher

American Institute of Physics

Additional Information

Dr. Susan Allen was not affiliated with Embry-Riddle Aeronautical University at the time this document was published.

Required Publisher’s Statement

Full-text article

Scholarly Commons Citation

Kudryashov, S. I., & Allen, S. D. (2002). Removal Versus Ablation in KrF Dry Laser Cleaning of Polystyrene Particles from Silicon. Journal of Applied Physics, 92(9). https://doi.org/10.1063/1.1503854